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Interfacial, Electrical, and Band Alignment Characteristics of HfO(2)/Ge Stacks with In Situ-Formed SiO(2) Interlayer by Plasma-Enhanced Atomic Layer Deposition
In situ-formed SiO(2) was introduced into HfO(2) gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO(2)/SiO(2) high-k gate dielectric stacks on Ge have been well investigated. It...
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| Publicado no: | Nanoscale Res Lett |
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| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5445033/ https://ncbi.nlm.nih.gov/pubmed/28549375 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2083-z |
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