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Electrical Properties and Interfacial Issues of HfO(2)/Ge MIS Capacitors Characterized by the Thickness of La(2)O(3) Interlayer
Effects of the La(2)O(3) passivation layer thickness on the interfacial properties of high-k/Ge interface are investigated systematically. In a very thin range (0~15 cycles), the increase of La(2)O(3) passivation layer deposition cycles improves the surface smoothness of HfO(2)/Ge structures. The ca...
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| Publicado no: | Nanomaterials (Basel) |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6567279/ https://ncbi.nlm.nih.gov/pubmed/31060261 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9050697 |
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