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Gate Stack Engineering and Thermal Treatment on Electrical and Interfacial Properties of Ti/Pt/HfO2/InAs pMOS Capacitors
Effects of gate stack engineering and thermal treatment on electrical and interfacial properties of Ti/Pt/HfO2/InAs metal insulator semiconductor (MIS) capacitors were systematically evaluated in terms of transmission electron microscopy, energy dispersive X-ray spectroscopy, current-voltage, and ca...
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| Main Authors: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Hindawi Limited
2012-01-01
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| Colecção: | Active and Passive Electronic Components |
| Acesso em linha: | http://dx.doi.org/10.1155/2012/729328 |
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