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In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO(2)/TiN Structure for CMOS Applications
The density of oxygen vacancies characterization in high-k/metal gate is significant for semiconductor device fabrication. In this work, a new approach was demonstrated to detect the density of oxygen vacancies by in situ x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectrosc...
Gorde:
| Argitaratua izan da: | Nanoscale Res Lett |
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| Egile Nagusiak: | , , , , , , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Springer US
2017
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5407434/ https://ncbi.nlm.nih.gov/pubmed/28454477 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2068-y |
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