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Ultralow Surface Recombination Velocity in Passivated InGaAs/InP Nanopillars
[Image: see text] The III–V semiconductor InGaAs is a key material for photonics because it provides optical emission and absorption in the 1.55 μm telecommunication wavelength window. However, InGaAs suffers from pronounced nonradiative effects associated with its surface states, which affect the p...
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| Publicado no: | Nano Lett |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
American Chemical Society
2017
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| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5391499/ https://ncbi.nlm.nih.gov/pubmed/28340296 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acs.nanolett.7b00430 |
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