Ultralow Surface Recombination Velocity in Passivated InGaAs/InP Nanopillars

[Image: see text] The III–V semiconductor InGaAs is a key material for photonics because it provides optical emission and absorption in the 1.55 μm telecommunication wavelength window. However, InGaAs suffers from pronounced nonradiative effects associated with its surface states, which affect the p...

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Publicat a:Nano Lett
Autors principals: Higuera-Rodriguez, A., Romeira, B., Birindelli, S., Black, L. E., Smalbrugge, E., van Veldhoven, P. J., Kessels, W. M. M., Smit, M. K., Fiore, A.
Format: Artigo
Idioma:Inglês
Publicat: American Chemical Society 2017
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5391499/
https://ncbi.nlm.nih.gov/pubmed/28340296
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acs.nanolett.7b00430
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