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Impact of contact resistance on the electrical properties of MoS(2) transistors at practical operating temperatures
Molybdenum disulphide (MoS(2)) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resi...
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| Publié dans: | Beilstein J Nanotechnol |
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| Auteurs principaux: | , , , , , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Beilstein-Institut
2017
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5301949/ https://ncbi.nlm.nih.gov/pubmed/28243564 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.8.28 |
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