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Impact of contact resistance on the electrical properties of MoS(2) transistors at practical operating temperatures
Molybdenum disulphide (MoS(2)) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resi...
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| Pubblicato in: | Beilstein J Nanotechnol |
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| Autori principali: | , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Beilstein-Institut
2017
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5301949/ https://ncbi.nlm.nih.gov/pubmed/28243564 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.8.28 |
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