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Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs)
The steady scaling-down of semiconductor device for improving performance has been the most important issue among researchers. Recently, as low-power consumption becomes one of the most important requirements, there have been many researches about novel devices for low-power consumption. Though scal...
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| Publicado no: | Nano Converg |
|---|---|
| Main Authors: | , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Korea Nano Technology Research Society
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5271161/ https://ncbi.nlm.nih.gov/pubmed/28191423 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s40580-016-0073-y |
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