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Analysis of the Negative-SET Behaviors in Cu/ZrO(2)/Pt Devices

Metal oxide-based electrochemical metallization memory (ECM) shows promising performance for next generation non-volatile memory. The negative-SET behavior has been observed in various oxide-based ECM devices. But the underlying mechanism of this behavior remains unaddressed and the role of the meta...

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Bibliografski detalji
Izdano u:Nanoscale Res Lett
Glavni autori: Liu, Sen, Zhao, Xiaolong, Li, Qingjiang, Li, Nan, Wang, Wei, Liu, Qi, Xu, Hui
Format: Artigo
Jezik:Inglês
Izdano: Springer US 2016
Teme:
Online pristup:https://ncbi.nlm.nih.gov/pmc/articles/PMC5142190/
https://ncbi.nlm.nih.gov/pubmed/27924625
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1762-5
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