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Analysis of the Negative-SET Behaviors in Cu/ZrO(2)/Pt Devices
Metal oxide-based electrochemical metallization memory (ECM) shows promising performance for next generation non-volatile memory. The negative-SET behavior has been observed in various oxide-based ECM devices. But the underlying mechanism of this behavior remains unaddressed and the role of the meta...
Tallennettuna:
| Julkaisussa: | Nanoscale Res Lett |
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| Päätekijät: | , , , , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Springer US
2016
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5142190/ https://ncbi.nlm.nih.gov/pubmed/27924625 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1762-5 |
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