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Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations
AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {Al(x)Ga(1−x)N}/AlN, (b) Thin-GaN/3 × {Al(x)Ga(1−x)N}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow...
Wedi'i Gadw mewn:
| Cyhoeddwyd yn: | Sci Rep |
|---|---|
| Prif Awduron: | , , , |
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
Nature Publishing Group
2016
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| Pynciau: | |
| Mynediad Ar-lein: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5116587/ https://ncbi.nlm.nih.gov/pubmed/27869222 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep37588 |
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