Lee, H., Perozek, J., Rosario, L. D., & Bayram, C. (2016). Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations. Sci Rep.
Stile di citazione ChicagoLee, H.-P., J. Perozek, L. D. Rosario, e C. Bayram. "Investigation of AlGaN/GaN High Electron Mobility Transistor Structures On 200-mm Silicon (111) Substrates Employing Different Buffer Layer Configurations." Sci Rep 2016.
Citazione MLALee, H.-P., J. Perozek, L. D. Rosario, e C. Bayram. "Investigation of AlGaN/GaN High Electron Mobility Transistor Structures On 200-mm Silicon (111) Substrates Employing Different Buffer Layer Configurations." Sci Rep 2016.
Attenzione: Queste citazioni potrebbero non essere precise al 100%.