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AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The max...

詳細記述

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書誌詳細
出版年:Micromachines (Basel)
主要な著者: Wojtasiak, Wojciech, Góralczyk, Marcin, Gryglewski, Daniel, Zając, Marcin, Kucharski, Robert, Prystawko, Paweł, Piotrowska, Anna, Ekielski, Marek, Kamińska, Eliana, Taube, Andrzej, Wzorek, Marek
フォーマット: Artigo
言語:Inglês
出版事項: MDPI 2018
主題:
オンライン・アクセス:https://ncbi.nlm.nih.gov/pmc/articles/PMC6266852/
https://ncbi.nlm.nih.gov/pubmed/30715045
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi9110546
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