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Electronic properties of MoS(2)/MoO(x) interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts
In an electronic device based on two dimensional (2D) transitional metal dichalcogenides (TMDs), finding a low resistance metal contact is critical in order to achieve the desired performance. However, due to the unusual Fermi level pinning in metal/2D TMD interface, the performance is limited. Here...
Guardat en:
| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2016
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5035990/ https://ncbi.nlm.nih.gov/pubmed/27666523 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep33562 |
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