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Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n-MOSFET Layout
In order to acquire radiation-tolerant characteristics in integrated circuits, a dummy gate-assisted n-type metal oxide semiconductor field effect transistor (DGA n-MOSFET) layout was adopted. The DGA n-MOSFET has a different channel shape compared with the standard n-MOSFET. The standard n-MOSFET h...
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| Publicat a: | Int Sch Res Notices |
|---|---|
| Autors principals: | , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Hindawi Publishing Corporation
2014
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4897586/ https://ncbi.nlm.nih.gov/pubmed/27350975 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1155/2014/145759 |
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