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3D Numerical Simulation of a Z Gate Layout MOSFET for Radiation Tolerance
In this paper, for the first time, an n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) layout with a Z gate and an improved total ionizing dose (TID) tolerance is proposed. The novel layout can be radiation-hardened with a fixed charge density at the shallow trench isolation (ST...
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| Publicado no: | Micromachines (Basel) |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6315489/ https://ncbi.nlm.nih.gov/pubmed/30558147 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi9120659 |
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