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Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability
A gallium nitride (GaN)-based normally off metal–oxide–semiconductor field-effect transistor (MOSFET) using a dual-metal-gate (DMG) structure was proposed and fabricated to improve current drivability. Normally off operation with a high <i>V</i><sub>th</sub> of 2.3 V was obta...
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| Main Authors: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI AG
2020-08-01
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| Colecção: | Electronics |
| Assuntos: | |
| Acesso em linha: | https://www.mdpi.com/2079-9292/9/9/1402 |
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