Performance Comparison of Silicon- and Gallium-Nitride-Based MOSFETs for a Power-Efficient, DC-to-DC Flyback Converter

Gallium Nitride (GaN)-based devices offer many advantages over conventional electronic devices, such as lower input/output capacitances, a higher switching speed, and a compact size, resulting in higher-density power outputs and reduced switching losses. This research investigates the power and swit...

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Main Authors: Osama Ahmed, Yousuf Khan, Muhammad A. Butt, Nikolay L. Kazanskiy, Svetlana N. Khonina
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2022-04-01
Colecção:Electronics
Assuntos:
converter topology
flyback converter
GaN devices
high-frequency devices
power density
power efficiency
Acesso em linha:https://www.mdpi.com/2079-9292/11/8/1222
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