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Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate
Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga(2)O(3)) through the utilization of a so-called ammoniating process. Ga(2)O(3) nanostructures were firstly deposited on Si substrate by a simple two-terminal elec...
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| Publicado no: | Nanoscale Res Lett |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2014
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4273690/ https://ncbi.nlm.nih.gov/pubmed/25593562 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-685 |
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