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Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate
Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga(2)O(3)) through the utilization of a so-called ammoniating process. Ga(2)O(3) nanostructures were firstly deposited on Si substrate by a simple two-terminal elec...
में बचाया:
| में प्रकाशित: | Nanoscale Res Lett |
|---|---|
| मुख्य लेखकों: | , , |
| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
Springer
2014
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| विषय: | |
| ऑनलाइन पहुंच: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4273690/ https://ncbi.nlm.nih.gov/pubmed/25593562 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-685 |
| टैग : |
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