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Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate
Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga(2)O(3)) through the utilization of a so-called ammoniating process. Ga(2)O(3) nanostructures were firstly deposited on Si substrate by a simple two-terminal elec...
Gardado en:
| Publicado en: | Nanoscale Res Lett |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Springer
2014
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4273690/ https://ncbi.nlm.nih.gov/pubmed/25593562 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-685 |
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