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Polarization memory effect in the photoluminescence of nc-Si−SiO(x) light-emitting structures
The polarization memory (PM) effect in the photoluminescence (PL) of the porous nc-Si−SiO(x) light-emitting structures, containing nanoparticles of silicon (nc-Si) in the oxide matrix and passivated in a solution of hydrofluoric acid (HF), has been investigated. The studied nc-Si−SiO(x) structures w...
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| Publicat a: | Nanoscale Res Lett |
|---|---|
| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer US
2016
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4889963/ https://ncbi.nlm.nih.gov/pubmed/27255897 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1496-4 |
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