Michailovska, K., Indutnyi, I., Shepeliavyi, P., & Sopinskyy, M. (2016). Polarization memory effect in the photoluminescence of nc-Si−SiO(x) light-emitting structures. Nanoscale Res Lett.
Chicago-стиль цитированияMichailovska, Katerina, Ivan Indutnyi, Petro Shepeliavyi, and Mykola Sopinskyy. "Polarization Memory Effect in the Photoluminescence of Nc-Si−SiO(x) Light-emitting Structures." Nanoscale Res Lett 2016.
MLA-цитированиеMichailovska, Katerina, Ivan Indutnyi, Petro Shepeliavyi, and Mykola Sopinskyy. "Polarization Memory Effect in the Photoluminescence of Nc-Si−SiO(x) Light-emitting Structures." Nanoscale Res Lett 2016.
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