A carregar...
Polarization memory effect in the photoluminescence of nc-Si−SiO(x) light-emitting structures
The polarization memory (PM) effect in the photoluminescence (PL) of the porous nc-Si−SiO(x) light-emitting structures, containing nanoparticles of silicon (nc-Si) in the oxide matrix and passivated in a solution of hydrofluoric acid (HF), has been investigated. The studied nc-Si−SiO(x) structures w...
Na minha lista:
| Publicado no: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2016
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4889963/ https://ncbi.nlm.nih.gov/pubmed/27255897 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1496-4 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|