A carregar...
Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots
InAs/GaAsBi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. GaAsBi-strained buffer layer and strain reduction layer are both effective to extend the photoluminescence (PL) emission wavelength of InAs quantum d...
Na minha lista:
| Publicado no: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2016
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4889962/ https://ncbi.nlm.nih.gov/pubmed/27255900 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1470-1 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|