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Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots
InAs/GaAsBi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. GaAsBi-strained buffer layer and strain reduction layer are both effective to extend the photoluminescence (PL) emission wavelength of InAs quantum d...
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| Publicat a: | Nanoscale Res Lett |
|---|---|
| Autors principals: | , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer US
2016
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4889962/ https://ncbi.nlm.nih.gov/pubmed/27255900 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1470-1 |
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