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Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots
InAs/GaAsBi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. GaAsBi-strained buffer layer and strain reduction layer are both effective to extend the photoluminescence (PL) emission wavelength of InAs quantum d...
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| Publicado en: | Nanoscale Res Lett |
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| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Springer US
2016
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4889962/ https://ncbi.nlm.nih.gov/pubmed/27255900 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1470-1 |
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