Caricamento...
Reactive Ion Etching in the Gaseous Electronics Conference RF Reference Cell
This paper describes the results of using the GEC reference cell as a reactive ion etcher. Silicon wafers with layers of polysilicon and silicon dioxide on crystaline silicon patterned with photoresist have been investigated with fluorine and chlorine chemistries. Scanning electron microscopy (SEM),...
Salvato in:
| Pubblicato in: | J Res Natl Inst Stand Technol |
|---|---|
| Autori principali: | , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
[Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology
1995
|
| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4887231/ https://ncbi.nlm.nih.gov/pubmed/29151753 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.6028/jres.100.033 |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne! !
|