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Reactive Ion Etching in the Gaseous Electronics Conference RF Reference Cell
This paper describes the results of using the GEC reference cell as a reactive ion etcher. Silicon wafers with layers of polysilicon and silicon dioxide on crystaline silicon patterned with photoresist have been investigated with fluorine and chlorine chemistries. Scanning electron microscopy (SEM),...
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| Publié dans: | J Res Natl Inst Stand Technol |
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| Auteurs principaux: | , , , , , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
[Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology
1995
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4887231/ https://ncbi.nlm.nih.gov/pubmed/29151753 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.6028/jres.100.033 |
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