Wird geladen...
Strained GaAs/InGaAs Core-Shell Nanowires for Photovoltaic Applications
We report on the successful growth of strained core-shell GaAs/InGaAs nanowires on Si (111) substrates by molecular beam epitaxy. The as-grown nanowires have a density in the order of 10(8) cm(−2), length between 3 and 3.5 μm, and diameter between 60 and 160 nm, depending on the shell growth duratio...
Gespeichert in:
| Veröffentlicht in: | Nanoscale Res Lett |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Springer US
2016
|
| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4818650/ https://ncbi.nlm.nih.gov/pubmed/27037927 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1384-y |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|