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Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires
The effects of ex-situ annealing in a N(2) ambient on the properties of GaAs/GaAsSbN/GaAs core-multi-shell nanowires on Si (111) substrate grown by self-catalyzed molecular beam epitaxy (MBE) are reported. As-grown nanowires exhibit band edge emission at ~0.99 eV with a shoulder peak at ~0.85 eV, id...
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| 出版年: | Nanoscale Res Lett |
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| 主要な著者: | , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Springer US
2016
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4735045/ https://ncbi.nlm.nih.gov/pubmed/26831685 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1265-4 |
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