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Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires
Core/shell nanowire (NW) heterostructures based on III-V semiconductors and related alloys are attractive for optoelectronic and photonic applications owing to the ability to modify their electronic structure via bandgap and strain engineering. Post-growth thermal annealing of such NWs is often invo...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7237432/ https://ncbi.nlm.nih.gov/pubmed/32427905 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-64958-6 |
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