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Suppression of non-radiative surface recombination by N incorporation in GaAs/GaNAs core/shell nanowires
III-V semiconductor nanowires (NWs) such as GaAs NWs form an interesting artificial materials system promising for applications in advanced optoelectronic and photonic devices, thanks to the advantages offered by the 1D architecture and the possibility to combine it with the main-stream silicon tech...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4477342/ https://ncbi.nlm.nih.gov/pubmed/26100755 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep11653 |
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