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Suppression of non-radiative surface recombination by N incorporation in GaAs/GaNAs core/shell nanowires

III-V semiconductor nanowires (NWs) such as GaAs NWs form an interesting artificial materials system promising for applications in advanced optoelectronic and photonic devices, thanks to the advantages offered by the 1D architecture and the possibility to combine it with the main-stream silicon tech...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Chen, Shula L., Chen, Weimin M., Ishikawa, Fumitaro, Buyanova, Irina A.
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2015
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4477342/
https://ncbi.nlm.nih.gov/pubmed/26100755
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep11653
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