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Suppression of non-radiative surface recombination by N incorporation in GaAs/GaNAs core/shell nanowires
III-V semiconductor nanowires (NWs) such as GaAs NWs form an interesting artificial materials system promising for applications in advanced optoelectronic and photonic devices, thanks to the advantages offered by the 1D architecture and the possibility to combine it with the main-stream silicon tech...
Tallennettuna:
| Julkaisussa: | Sci Rep |
|---|---|
| Päätekijät: | , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Nature Publishing Group
2015
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4477342/ https://ncbi.nlm.nih.gov/pubmed/26100755 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep11653 |
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