Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires

Core/shell nanowire (NW) heterostructures based on III-V semiconductors and related alloys are attractive for optoelectronic and photonic applications owing to the ability to modify their electronic structure via bandgap and strain engineering. Post-growth thermal annealing of such NWs is often invo...

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Detaylı Bibliyografya
Yayımlandı:Sci Rep
Asıl Yazarlar: Balagula, Roman M., Jansson, Mattias, Yukimune, Mitsuki, Stehr, Jan E., Ishikawa, Fumitaro, Chen, Weimin M., Buyanova, Irina A.
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: Nature Publishing Group UK 2020
Konular:
Article
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC7237432/
https://ncbi.nlm.nih.gov/pubmed/32427905
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-64958-6
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