Strained GaAs/InGaAs Core-Shell Nanowires for Photovoltaic Applications

We report on the successful growth of strained core-shell GaAs/InGaAs nanowires on Si (111) substrates by molecular beam epitaxy. The as-grown nanowires have a density in the order of 10(8) cm(−2), length between 3 and 3.5 μm, and diameter between 60 and 160 nm, depending on the shell growth duratio...

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Dades bibliogràfiques
Publicat a:Nanoscale Res Lett
Autors principals: Moratis, K., Tan, S. L., Germanis, S., Katsidis, C., Androulidaki, M., Tsagaraki, K., Hatzopoulos, Z., Donatini, F., Cibert, J., Niquet, Y. -M., Mariette, H., Pelekanos, N. T.
Format: Artigo
Idioma:Inglês
Publicat: Springer US 2016
Matèries:
Nano Express
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC4818650/
https://ncbi.nlm.nih.gov/pubmed/27037927
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1384-y
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