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Strained GaAs/InGaAs Core-Shell Nanowires for Photovoltaic Applications
We report on the successful growth of strained core-shell GaAs/InGaAs nanowires on Si (111) substrates by molecular beam epitaxy. The as-grown nanowires have a density in the order of 10(8) cm(−2), length between 3 and 3.5 μm, and diameter between 60 and 160 nm, depending on the shell growth duratio...
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| Publicado no: | Nanoscale Res Lett |
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| Main Authors: | , , , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4818650/ https://ncbi.nlm.nih.gov/pubmed/27037927 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1384-y |
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