Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion...

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Detalhes bibliográficos
Main Authors: Cirlin, GE, Bouravleuv, AD, Soshnikov, IP, Samsonenko, Yu B, Dubrovskii, VG, Arakcheeva, EM, Tanklevskaya, EM, Werner, P
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2009
Assuntos:
Nano Express
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC2894346/
https://ncbi.nlm.nih.gov/pubmed/20672038
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-009-9488-2
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