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n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires
In this letter, n-type doping of GaAs nanowires grown by metal–organic vapor phase epitaxy in the vapor–liquid–solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of...
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| Auteurs principaux: | , , , , , |
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Springer
2010
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3212212/ https://ncbi.nlm.nih.gov/pubmed/27502686 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-010-9815-7 |
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