Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure

InAs/InGaAs dot-in-well (DWELL) structures have been investigated with the systematically varied InGaAs thickness. Both the strained buffer layer (SBL) below the dot layer and the strain-reducing layer (SRL) above the dot layer were found to be responsible for the redshift in photoluminescence (PL)...

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Vydáno v:Nanoscale Res Lett
Hlavní autoři: Wang, Peng, Chen, Qimiao, Wu, Xiaoyan, Cao, Chunfang, Wang, Shumin, Gong, Qian
Médium: Artigo
Jazyk:Inglês
Vydáno: Springer US 2016
Témata:
Nano Express
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC4773316/
https://ncbi.nlm.nih.gov/pubmed/26932758
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1339-3
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