Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure

We have studied the electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure, i.e., with an In(0.15)Ga(0.85)As quantum well (QW) as capping layer above InAs quantum dots (QDs), via temperature-dependent photoluminescence, photo-modulated reflectance, and rapid thermal annealin...

Täydet tiedot

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Bibliografiset tiedot
Päätekijät: Zhou, Xiaolong, Chen, Yonghai, Xu, Bo
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Springer 2011
Aiheet:
Nano Express
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC3211404/
https://ncbi.nlm.nih.gov/pubmed/21711820
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-317
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