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Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure
We have studied the electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure, i.e., with an In(0.15)Ga(0.85)As quantum well (QW) as capping layer above InAs quantum dots (QDs), via temperature-dependent photoluminescence, photo-modulated reflectance, and rapid thermal annealin...
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| Main Authors: | , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Springer
2011
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211404/ https://ncbi.nlm.nih.gov/pubmed/21711820 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-317 |
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