Ground and Excited States Energy in InAs Quantum Dots in a Well InGaAs/GaAs Structures

This paper presents the photoluminescence study at 80 K and scanning photoluminescence spectroscopy investigation of the ground and multiexcited states at 80 and 300 K in InAs quantum dots (QDs) inserted in symmetric In0.15Ga0.85As/GaAs QW structures created at different QD growth temperatures. It i...

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Bibliographic Details
Published in:Científica
Main Authors: Erick Velázquez-Lozada, Juan M. Quino-Cerdan, Josué I. Espinosa-Cisneros
Format: Artigo
Language:Inglês
Published: Instituto Politécnico Nacional 2012
Subjects:
Ingeniería
QD sizes
ground state
growth temperatures
multi excited state energy
Online Access:https://www.redalyc.org/articulo.oa?id=61426384001
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