Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al(2)O(3) as Dielectric Layers

InN-based metal-insulator-semiconductor (MIS) structures were prepared with Al(2)O(3) as the gate oxides. Surface morphologies of InN films are improved with increasing Mg doping concentrations. At high frequencies, the measured capacitance densities deviate from the real ones with turning frequenci...

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發表在:Nanoscale Res Lett
Main Authors: Wang, X., Zhang, G. Z., Xu, Y., Gan, X. W., Chen, C., Wang, Z., Wang, Y., Wang, J. L., Wang, T., Wu, H., Liu, C.
格式: Artigo
語言:Inglês
出版: Springer US 2016
主題:
Nano Express
在線閱讀:https://ncbi.nlm.nih.gov/pmc/articles/PMC4710628/
https://ncbi.nlm.nih.gov/pubmed/26759357
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1232-0
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