Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al(2)O(3) as Dielectric Layers

InN-based metal-insulator-semiconductor (MIS) structures were prepared with Al(2)O(3) as the gate oxides. Surface morphologies of InN films are improved with increasing Mg doping concentrations. At high frequencies, the measured capacitance densities deviate from the real ones with turning frequenci...

Celý popis

Uloženo v:
Podrobná bibliografie
Vydáno v:Nanoscale Res Lett
Hlavní autoři: Wang, X., Zhang, G. Z., Xu, Y., Gan, X. W., Chen, C., Wang, Z., Wang, Y., Wang, J. L., Wang, T., Wu, H., Liu, C.
Médium: Artigo
Jazyk:Inglês
Vydáno: Springer US 2016
Témata:
Nano Express
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC4710628/
https://ncbi.nlm.nih.gov/pubmed/26759357
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1232-0
Tagy: Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!

Podobné jednotky