Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al(2)O(3) as Dielectric Layers

InN-based metal-insulator-semiconductor (MIS) structures were prepared with Al(2)O(3) as the gate oxides. Surface morphologies of InN films are improved with increasing Mg doping concentrations. At high frequencies, the measured capacitance densities deviate from the real ones with turning frequenci...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Wang, X., Zhang, G. Z., Xu, Y., Gan, X. W., Chen, C., Wang, Z., Wang, Y., Wang, J. L., Wang, T., Wu, H., Liu, C.
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2016
Assuntos:
Nano Express
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4710628/
https://ncbi.nlm.nih.gov/pubmed/26759357
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1232-0
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