Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al(2)O(3) as Dielectric Layers

Por Wang, X., Zhang, G. Z., Xu, Y., Gan, X. W., Chen, C., Wang, Z., Wang, Y., Wang, J. L., Wang, T., Wu, H., Liu, C.
Publicado no Nanoscale Res Lett (2016)