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Coincident-site lattice matching during van der Waals epitaxy
Van der Waals (vdW) epitaxy is an attractive method for the fabrication of vdW heterostructures. Here Sb(2)Te(3) films grown on three different kind of graphene substrates (monolayer epitaxial graphene, quasi freestanding bilayer graphene and the SiC (6√3 × 6√3)R30° buffer layer) are used to study t...
Guardat en:
| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2015
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4677287/ https://ncbi.nlm.nih.gov/pubmed/26658715 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep18079 |
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