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Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys
The present work displays a route to design strain gradients at the interface between substrate and van der Waals bonded materials. The latter are expected to grow decoupled from the substrates and fully relaxed and thus, by definition, incompatible with conventional strain engineering. By the usage...
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| Опубликовано в: : | Sci Rep |
|---|---|
| Главные авторы: | , , , , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Nature Publishing Group UK
2017
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5431103/ https://ncbi.nlm.nih.gov/pubmed/28469258 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-01502-z |
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