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Van der Waals Epitaxy of III-Nitrides and Its Applications
III-nitride semiconductors have wide bandgap and high carrier mobility, making them suitable candidates for light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility transistors (HEMTs) and other optoelectronics. Compared with conventional epitaxy technique, van der Waals epitaxy (vdW...
Guardat en:
| Publicat a: | Materials (Basel) |
|---|---|
| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2020
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7503271/ https://ncbi.nlm.nih.gov/pubmed/32878046 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13173835 |
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