Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS(2)

Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of III-nitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagon...

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Dettagli Bibliografici
Pubblicato in:Materials (Basel)
Autori principali: Yin, Yue, Ren, Fang, Wang, Yunyu, Liu, Zhiqiang, Ao, Jinping, Liang, Meng, Wei, Tongbo, Yuan, Guodong, Ou, Haiyan, Yan, Jianchang, Yi, Xiaoyan, Wang, Junxi, Li, Jinmin
Natura: Artigo
Lingua:Inglês
Pubblicazione: MDPI 2018
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Article
Accesso online:https://ncbi.nlm.nih.gov/pmc/articles/PMC6317269/
https://ncbi.nlm.nih.gov/pubmed/30518146
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma11122464
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