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Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS(2)
Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of III-nitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagon...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6317269/ https://ncbi.nlm.nih.gov/pubmed/30518146 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma11122464 |
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