Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si

High density of defects and stress owing to the lattice and thermal mismatch between nitride materials and heterogeneous substrates have always been important problems and limit the development of nitride materials. In this paper, AlGaN light-emitting diodes (LEDs) were grown directly on a single-la...

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Detalhes bibliográficos
Publicado no:Materials (Basel)
Main Authors: Ren, Fang, Yin, Yue, Wang, Yunyu, Liu, Zhiqiang, Liang, Meng, Ou, Haiyan, Ao, Jinping, Wei, Tongbo, Yan, Jianchang, Yuan, Guodong, Yi, Xiaoyan, Wang, Junxi, Li, Jinmin, Dasa, Dheeraj, Weman, Helge
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2018
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6316983/
https://ncbi.nlm.nih.gov/pubmed/30486245
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma11122372
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