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Epitaxy of III-Nitrides on β-Ga(2)O(3) and Its Vertical Structure LEDs
β-Ga(2)O(3), characterized with high n-type conductivity, little lattice mismatch with III-Nitrides, high transparency (>80%) in blue, and UVA (400–320 nm) as well as UVB (320–280 nm) regions, has great potential as the substrate for vertical structure blue and especially ultra violet LEDs (light...
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| Publicado no: | Micromachines (Basel) |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6562507/ https://ncbi.nlm.nih.gov/pubmed/31086010 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi10050322 |
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