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Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaO(x) Thin Film
A Ta/TaO(x)/Pt stacked capacitor-like device for resistive switching was fabricated and examined. The tested device demonstrated stable resistive switching characteristics including uniform distribution of resistive switching operational parameters, highly promising endurance, and retention properti...
में बचाया:
| में प्रकाशित: | Sci Rep |
|---|---|
| मुख्य लेखकों: | , , , , |
| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
Nature Publishing Group
2015
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| विषय: | |
| ऑनलाइन पहुंच: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4568465/ https://ncbi.nlm.nih.gov/pubmed/26365532 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep14053 |
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