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Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaO(x) Thin Film
A Ta/TaO(x)/Pt stacked capacitor-like device for resistive switching was fabricated and examined. The tested device demonstrated stable resistive switching characteristics including uniform distribution of resistive switching operational parameters, highly promising endurance, and retention properti...
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| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2015
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4568465/ https://ncbi.nlm.nih.gov/pubmed/26365532 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep14053 |
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